与Si CMOS兼容的Graphene/MoS2异质结全差分光电探测器和读出电路

Graphene/MoS2heterojunction fully differential photodetector and readout circ uit compatible with Si CMOS

摘要:

提出了一种基于Graphene/MoS₂异质结的全差分 光 电探测器。利用标准半导体微纳加工技术,制作了有效区域为2.3 μ m×10 μm的Graphene/MoS₂异质结结构,用以产生差 分光电流；使用0.18 μm CMOS工艺设计了差分放大与恒压控制电路 ,实现光电流到电压的转换和放大。结果表明:在白光照射 下,单个Graphene/MoS₂异质结结构光响应度达2435 A/W。差分光生电流经过差分放大器后,以电压形式输出,总光响应度加 倍。该全差分光探测器基于新型二维材料,对可见光具有较高的灵敏度,在可见光探测和成 像领域具有广阔的应用前景。

Abstract:

A fully differential photodetector bas ed on Graphene/MoS_{2heterojunction} is proposed in this paper.A Graphene/MoS_{2heterojunction} structure with an effective region of 2.3μm×10μm is manufact ured by using standard semiconductor micro nano processing technology which can be used to produce differential photocurrents.A differential amplifying and cons tant voltage control circuit is designed with 0.18μm complementary metal oxide semi conductor (CMOS) technology to convert the photocurrent signal from differential photodetors into the voltage signal,and r ealize a certain amount of amplification.Results show that the photoresponse for a single Graphene/MoS_{2heterojunction} detector is up to 2435A/W under the illumination of white light.After the differential photocurrents passing through the fully diffe rential amplifier,they can be converted into voltage signals, and the total photoresponse amplitude of the fully differential detector also ca n be twice as much as single ones.The fully differential photodetector based on novel two-dimensional (2D) materials has a strong sensitivity to the visible light.This kind of detector will have a wide a pplication prospect in the field of visible light detection and imaging.